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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5598 2N5600 2N5602 2N5604 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=ae ) SYMBOL VCBO PARAMETER CONDITIONS 2N5598 Collector-base voltage 2N5600/5602 2N5604 VCEO Collector-emitter voltage INC NG S HA 2N5598 2N5604 CON EMI Open emitter Open base Open collector TOR DUC VALUE 80 100 120 60 80 100 5 2 UNIT V 2N5600/5602 V VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature V A W ae ae TC=25ae 20 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N5598 VCEO(SUS) Collector-emitter sustaining voltage 2N5600/5602 2N5604 VCEsat VBE ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5598 2N5600 2N5602 2N5604 SYMBOL CONDITIONS MIN 60 TYP. MAX UNIT IC=50mA ;IB=0 80 100 V IC=1A; IB=0.1A IC=1A ; VCE=5V VCB=Rated VCBO; IE=0 VCE= Rated VCEO,IB=0 VEB=5V; IC=0 70 1.0 1.5 0.1 1.0 0.1 V V mA mA mA hFE DC current gain 2N5598/5602 2N5600/5604 2N5598/5602 fT Transition frequency INCH NG S A 2N5600/5604 CON EMI IC=0.5A ; VCE=10V IC=1A ; VCE=5V TOR DUC 200 90 30 60 MHz 50 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5598 2N5600 2N5602 2N5604 NG S HA INC CON EMI TOR DUC Fig.2 outline dimensions 3 |
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